Invention Grant
- Patent Title: Semiconductor structure and method for making the same
- Patent Title (中): 半导体结构及制作方法
-
Application No.: US12794294Application Date: 2010-06-04
-
Publication No.: US08415807B2Publication Date: 2013-04-09
- Inventor: Meng-Jen Wang
- Applicant: Meng-Jen Wang
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: McCracken & Frank LLC
- Priority: TW98141397A 20091203
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
The present invention relates to a semiconductor structure and a method for making the same. The method includes the following steps: (a) providing a first wafer and a second wafer; (b) disposing the first wafer on the second wafer; (c) removing part of the first wafer, so as to form a groove; (d) forming a through via in the groove; and (e) forming at least one electrical connecting element on the first wafer. Therefore, the wafers are penetrated and electrically connected by forming only one conductive via, which leads to a simplified process and a low manufacturing cost.
Public/Granted literature
- US20110133339A1 Semiconductor Structure and Method for Making the Same Public/Granted day:2011-06-09
Information query
IPC分类: