Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US13178694Application Date: 2011-07-08
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Publication No.: US08415982B2Publication Date: 2013-04-09
- Inventor: Chenkong Teh , Hiroyuki Hara
- Applicant: Chenkong Teh , Hiroyuki Hara
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2009-139452 20090610
- Main IPC: H03K19/096
- IPC: H03K19/096 ; H03K19/094 ; H03K19/20 ; H03K3/00 ; H03K5/12 ; H03B1/00

Abstract:
A semiconductor integrated circuit device includes: a first inverter constituted by a first transistor configured to charge a charge point based on an input signal, and a second transistor configured to discharge a discharge point based on the input signal; a P-type third transistor and an N-type fourth transistor with drain-source paths provided in parallel between the charge point and the discharge point; and a second inverter configured to invert a potential of the charge point or the discharge point and supply the inverted potential to gates of the third and fourth transistors, and obtain a delay signal of the input signal from the charge point or the discharge point. The semiconductor integrated circuit device secures a sufficient delay time with a small area.
Public/Granted literature
- US20110260754A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2011-10-27
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