Invention Grant
- Patent Title: Active rectifying apparatus
- Patent Title (中): 主动整流装置
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Application No.: US13078386Application Date: 2011-04-01
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Publication No.: US08416015B2Publication Date: 2013-04-09
- Inventor: Chikara Tsuchiya
- Applicant: Chikara Tsuchiya
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2009-290304 20091222; JP2010-271891 20101206
- Main IPC: H03K17/74
- IPC: H03K17/74 ; H03G11/02

Abstract:
A semiconductor apparatus includes: a first transistor; a second transistor having a higher withstand voltage than the first transistor, a source of the second transistor coupled to a drain of the first transistor, a gate of the second transistor coupled to a source of the first transistor; a third transistor having a higher withstand voltage than the first transistor and a drain of the third transistor coupled to a drain of the second transistor; and a comparator that compares a source voltage of the first transistor with a source voltage of the third transistor, and controls a gate voltage of the first transistor.
Public/Granted literature
- US20110181218A1 SEMICONDUCTOR APPARATUS Public/Granted day:2011-07-28
Information query
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