Invention Grant
- Patent Title: Power amplifier device
- Patent Title (中): 功率放大器装置
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Application No.: US13450184Application Date: 2012-04-18
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Publication No.: US08416022B2Publication Date: 2013-04-09
- Inventor: Tsuyoshi Kawakami , Kazuyasu Nishikawa
- Applicant: Tsuyoshi Kawakami , Kazuyasu Nishikawa
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-042840 20100226
- Main IPC: H03F3/68
- IPC: H03F3/68

Abstract:
A power amplifier device that satisfies both delivering a high output and reducing the chip area occupied by the power amplifier device. Over a substrate, are primary inductors arranged in a generally circular geometry, a ground pattern, transistor pairs, and a secondary inductor. The ground pattern extends from a portion of a region inside the circular primary inductor into regions outside the primary inductor, and grounded at a plurality of points in the regions outside the primary inductor. The primary inductors are coupled to the ground pattern through transistors.
Public/Granted literature
- US20120262237A1 POWER AMPLIFIER DEVICE Public/Granted day:2012-10-18
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