Invention Grant
- Patent Title: Defect inspection apparatus and method
- Patent Title (中): 缺陷检查装置及方法
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Application No.: US12389962Application Date: 2009-02-20
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Publication No.: US08416292B2Publication Date: 2013-04-09
- Inventor: Yukihiro Shibata , Yasuhiro Yoshitake
- Applicant: Yukihiro Shibata , Yasuhiro Yoshitake
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2008-038172 20080220
- Main IPC: H04N7/18
- IPC: H04N7/18

Abstract:
In a defect inspection apparatus for inspecting a wafer provided with a circuit pattern for defects, the illuminating direction of illuminating light rays is selectively determined such that an area containing a defect that scatters light of high intensity coincides with the aperture of a dark-field detecting system, and such that regularly reflected light regularly reflected by a pattern, which is noise to defect detection, does not coincide with the aperture of the dark field detecting system.
Public/Granted literature
- US20090213215A1 DEFECT INSPECTION APPARATUS AND METHOD Public/Granted day:2009-08-27
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