Invention Grant
- Patent Title: Coreless substrate and method for making the same
- Patent Title (中): 无芯底物和制造方法
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Application No.: US12691502Application Date: 2010-01-21
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Publication No.: US08416577B2Publication Date: 2013-04-09
- Inventor: Chien-Hao Wang , Ming-Chiang Lee
- Applicant: Chien-Hao Wang , Ming-Chiang Lee
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: McCracken & Frank LLC
- Priority: TW98104876A 20090216
- Main IPC: H05K1/00
- IPC: H05K1/00

Abstract:
The present invention relates to a coreless substrate and a method for making the same. The method for making the coreless substrate includes: (a) providing a carrier and a first conductive layer, wherein the carrier has a first surface and a second surface, and the first conductive layer is disposed on the first surface of the carrier; (b) forming a first embedded circuit on the first conductive layer; (c) forming a first dielectric layer so as to cover the first embedded circuit; (d) removing the carrier; (e) removing part of the first conductive layer so as to form at least one first pad; and (f) forming a first solder mask so as to cover the first embedded circuit and the first dielectric layer and to expose the first pad. Therefore, the coreless substrate of the present invention has high density of layout and involves low manufacturing cost.
Public/Granted literature
- US20100206618A1 Coreless Substrate and Method for Making the Same Public/Granted day:2010-08-19
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