Invention Grant
US08416604B2 Method of implementing memristor-based multilevel memory using reference resistor array
有权
使用参考电阻阵列实现基于忆阻器的多电平存储器的方法
- Patent Title: Method of implementing memristor-based multilevel memory using reference resistor array
- Patent Title (中): 使用参考电阻阵列实现基于忆阻器的多电平存储器的方法
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Application No.: US13009969Application Date: 2011-01-20
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Publication No.: US08416604B2Publication Date: 2013-04-09
- Inventor: Hyongsuk Kim , Leon O. Chua
- Applicant: Hyongsuk Kim , Leon O. Chua
- Applicant Address: KR Jeonbuk US CA Oakland
- Assignee: Industrial Cooperation Foundation Chonbuk National University,The Regents of the University of California
- Current Assignee: Industrial Cooperation Foundation Chonbuk National University,The Regents of the University of California
- Current Assignee Address: KR Jeonbuk US CA Oakland
- Agency: Fulbright & Jaworski LLP
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
The present invention relates to a memristor, and more particularly, to a method of implementing a memristor-based multilevel memory using a reference resistor array and a write-in circuit and a read-out/restoration circuit for the memristor-based multilevel memory, in which a memristor can be used as a multilevel memory. In the present invention, a reference resistance value is written in a selected memristor of a memristor array by applying repeatedly the current pulses of which widths are proportional to the difference between the resistances of the selected memristor and the selected node of the reference resistor array.
Public/Granted literature
- US20110182104A1 METHOD OF IMPLEMENTING MEMRISTOR-BASED MULTILEVEL MEMORY USING REFERENCE RESISTOR ARRAY Public/Granted day:2011-07-28
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