Invention Grant
- Patent Title: Magnetic memory with phonon glass electron crystal material
- Patent Title (中): 具有声子玻璃电子晶体材料的磁记忆体
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Application No.: US13089538Application Date: 2011-04-19
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Publication No.: US08416619B2Publication Date: 2013-04-09
- Inventor: Yuankai Zheng , Haiwen Xi , Dimitar V. Dimitrov , Dexin Wang
- Applicant: Yuankai Zheng , Haiwen Xi , Dimitar V. Dimitrov , Dexin Wang
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: G11C11/14
- IPC: G11C11/14
Abstract:
A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.
Public/Granted literature
- US20110194335A1 MAGNETIC MEMORY WITH PHONON GLASS ELECTRON CRYSTAL MATERIAL Public/Granted day:2011-08-11
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