Invention Grant
- Patent Title: Magnetic stack having assist layer
- Patent Title (中): 具有辅助层的磁性堆叠
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Application No.: US12943976Application Date: 2010-11-11
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Publication No.: US08416620B2Publication Date: 2013-04-09
- Inventor: Yuankai Zheng , Zheng Gao , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Haiwen Xi
- Applicant: Yuankai Zheng , Zheng Gao , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Haiwen Xi
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: G11C11/15
- IPC: G11C11/15
Abstract:
A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.
Public/Granted literature
- US20110058412A1 MAGNETIC STACK HAVING ASSIST LAYER Public/Granted day:2011-03-10
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