Invention Grant
US08416632B2 Bitline precharge voltage generator, semiconductor memory device comprising same, and method of trimming bitline precharge voltage
有权
位线预充电电压发生器，包括其的半导体存储器件，以及微调位线预充电电压的方法
- Patent Title: Bitline precharge voltage generator, semiconductor memory device comprising same, and method of trimming bitline precharge voltage
- Patent Title (中): 位线预充电电压发生器，包括其的半导体存储器件，以及微调位线预充电电压的方法
-
Application No.: US12904302Application Date: 2010-10-14
-
Publication No.: US08416632B2Publication Date: 2013-04-09
- Inventor: Ki-Heung Kim , Seong-Jin Jang , Myeong-O Kim , Hong-Jun Lee , Tae-Yoon Lee
- Applicant: Ki-Heung Kim , Seong-Jin Jang , Myeong-O Kim , Hong-Jun Lee , Tae-Yoon Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0113664 20091124
- Main IPC: G11C5/14
- IPC: G11C5/14
Abstract:
A bitline precharge voltage generator comprises a leakage trimming unit and a bitline precharge voltage providing unit. The leakage trimming unit applies a leakage current to an output node to place a bitline precharge voltage at an edge of a dead zone. The bitline precharge voltage providing unit provides the bitline precharge voltage to the output node, and sets the bitline precharge voltage to a target level. The bitline precharge voltage generator generates the bitline precharge voltage having a distribution including the dead zone.
Public/Granted literature
Information query
