Invention Grant
- Patent Title: Quantum well active region with three dimensional barriers and fabrication
- Patent Title (中): 量子阱活性区具有三维屏障和制作
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Application No.: US12598224Application Date: 2008-04-29
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Publication No.: US08416823B2Publication Date: 2013-04-09
- Inventor: James J. Coleman , Victor C. Elarde
- Applicant: James J. Coleman , Victor C. Elarde
- Applicant Address: US IL Urbana
- Assignee: The Board of Trustees of the University of Illinois
- Current Assignee: The Board of Trustees of the University of Illinois
- Current Assignee Address: US IL Urbana
- Agency: Greer, Burns & Crain Ltd.
- International Application: PCT/US2008/005508 WO 20080429
- International Announcement: WO2009/023046 WO 20090219
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
The invention provides a quantum well active region for an optoelectronic device. The quantum well active region includes barrier layers of high bandgap material. A quantum well of low bandgap material is between the barrier layers. Three-dimensional high bandgap barriers are in the quantum well. A preferred semiconductor laser of the invention includes a quantum well active region of the invention. Cladding layers are around the quantum well active region, as well as a waveguide structure.
Public/Granted literature
- US20100208761A1 QUANTUM WELL ACTIVE REGION WITH THREE DIMENSIONAL BARRIERS AND FABRICATION Public/Granted day:2010-08-19
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