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US08416825B1 Optical device structure using GaN substrates and growth structure for laser applications 有权
使用GaN衬底的光学器件结构和用于激光应用的生长结构

  • Patent Title: Optical device structure using GaN substrates and growth structure for laser applications
  • Patent Title (中): 使用GaN衬底的光学器件结构和用于激光应用的生长结构
  • Application No.: US13354639
    Application Date: 2012-01-20
  • Publication No.: US08416825B1
    Publication Date: 2013-04-09
  • Inventor: James W. Raring
  • Applicant: James W. Raring
  • Applicant Address: US CA Fremont
  • Assignee: Soraa, Inc.
  • Current Assignee: Soraa, Inc.
  • Current Assignee Address: US CA Fremont
  • Agency: Kilpatrick Townsend & Stockton LLP
  • Main IPC: H01S5/00
  • IPC: H01S5/00
Optical device structure using GaN substrates and growth structure for laser applications
Abstract:
An optical device having a structured active region configured for one or more selected wavelengths of light emissions.
Abstract(Chinese):

一种光学器件，其具有被配置用于一个或多个选定波长的光发射的结构化有源区。

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