Invention Grant
- Patent Title: High speed memory having a programmable read preamble
- Patent Title (中): 具有可编程读取前置码的高速存储器
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Application No.: US12691633Application Date: 2010-01-21
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Publication No.: US08417874B2Publication Date: 2013-04-09
- Inventor: Clifford Alan Zitlaw , Anthony Le
- Applicant: Clifford Alan Zitlaw , Anthony Le
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Turocy & Watson, LLP
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
The subject systems and/or methods relate to a high speed memory device that enables a preamble pattern to be updated after manufacture. A high speed memory device can include a FLASH module and a RAM module. The FLASH module can include an initial preamble pattern, wherein the initial preamble pattern is loaded during a power-up of the high speed memory. The RAM module can include a default preamble pattern, wherein the default preamble pattern is loaded after the power-up of the high speed memory. The initial preamble pattern or the default preamble pattern can be defined by a manufacture of the high speed memory or an OEM of the high speed memory. Additionally, the initial preamble pattern or the default preamble pattern can be updated with a customized preamble pattern based upon a target environment.
Public/Granted literature
- US20110179215A1 PROGRAMMABLE READ PREAMBLE Public/Granted day:2011-07-21
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