Invention Grant
- Patent Title: System for NAND flash parameter auto-detection
- Patent Title (中): 系统用于NAND闪存参数自动检测
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Application No.: US12916652Application Date: 2010-11-01
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Publication No.: US08417880B2Publication Date: 2013-04-09
- Inventor: Chi Ho Lam , Ka Leung Ho
- Applicant: Chi Ho Lam , Ka Leung Ho
- Applicant Address: CN Hong Kong Science Park, Shatin, New Territories, Hong Kong
- Assignee: Hong Kong Applied Science and Technology Research Institute Company Limited
- Current Assignee: Hong Kong Applied Science and Technology Research Institute Company Limited
- Current Assignee Address: CN Hong Kong Science Park, Shatin, New Territories, Hong Kong
- Agency: Ella Cheong Hong Kong
- Agent Sam T. Yip
- Main IPC: G06F13/00
- IPC: G06F13/00
Abstract:
A system comprising a NAND flash memory device having a multiplicity of parameters; a flash controller configured to perform a NAND flash memory parameter automatic detection process including reading a device identifier of the NAND flash memory device and proceeding if a valid device identifier value is returned, detecting an address cycle and a block type of the NAND flash memory device, detecting a page size of the NAND flash memory device, detecting a spare size of the NAND flash memory device, detecting a memory size of the NAND flash memory device, and detecting a block size of the NAND flash memory device.
Public/Granted literature
- US20120110241A1 SYSTEM FOR NAND FLASH PARAMETER AUTO-DETECTION Public/Granted day:2012-05-03
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