Invention Grant
- Patent Title: Methods and system for lithography calibration
- Patent Title (中): 光刻校准方法与系统
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Application No.: US12613221Application Date: 2009-11-05
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Publication No.: US08418088B2Publication Date: 2013-04-09
- Inventor: Jun Ye , Yu Cao , Hanying Feng
- Applicant: Jun Ye , Yu Cao , Hanying Feng
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method of efficient optical and resist parameters calibration based on simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process. Systems and methods for calibration of lithographic processes whereby a polynomial fit is calculated for a nominal configuration of the optical system and which can be used to estimate critical dimensions for other configurations.
Public/Granted literature
- US20100119961A1 METHODS AND SYSTEM FOR LITHOGRAPHY CALIBRATION Public/Granted day:2010-05-13
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