Invention Grant
- Patent Title: Fully-on-chip temperature, process, and voltage sensor system
- Patent Title (中): 全面的温度,过程和电压传感器系统
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Application No.: US12910199Application Date: 2010-10-22
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Publication No.: US08419274B2Publication Date: 2013-04-16
- Inventor: Shi-Wen Chen , Ming-Hung Chang , Wei-Chih Hsieh , Wei Hwang
- Applicant: Shi-Wen Chen , Ming-Hung Chang , Wei-Chih Hsieh , Wei Hwang
- Applicant Address: TW Hsinchu
- Assignee: National Chiao Tung University
- Current Assignee: National Chiao Tung University
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW99129470A 20100901
- Main IPC: G01K7/00
- IPC: G01K7/00

Abstract:
A fully on-chip temperature, process, and voltage sensor includes a voltage sensor, a process sensor and a temperature sensor. The temperature sensor includes a bias current generator, a ring oscillator, a fixed pulse generator, an AND gate, and a first counter. The bias current generator generates an output current related to temperature according to the operating voltage of chip. The ring oscillator generates an oscillation signal according to the output current. The fixed pulse generator generates a fixed pulse signal. The AND gate is connected to the ring oscillator and the fixed pulse generator for performing a logic AND operation on the oscillation signal and the fixed pulse signal, and generating a temperature sensor signal.
Public/Granted literature
- US20120051395A1 FULLY-ON-CHIP TEMPERATURE, PROCESS, AND VOLTAGE SENSOR SYSTEM Public/Granted day:2012-03-01
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