Invention Grant
- Patent Title: Gate valve and substrate processing system using same
- Patent Title (中): 闸阀和基板处理系统使用它
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Application No.: US12849465Application Date: 2010-08-03
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Publication No.: US08419337B2Publication Date: 2013-04-16
- Inventor: Koichi Tateshita , Tetsuya Mochizuki
- Applicant: Koichi Tateshita , Tetsuya Mochizuki
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-181613 20090804; JP2010-102376 20100427
- Main IPC: H01L21/677
- IPC: H01L21/677

Abstract:
A gate valve includes a valve body to be pressed against a peripheral surface around opening through which a processing target object is loaded and unloaded, pressed members arranged on a surface of the valve body around the opening, a main slider which slides in a direction parallel to the peripheral surface around the opening and pressing mechanisms, provided at the main slider, for pressing the respective pressed members. Each of the pressing mechanisms includes a cam having a protrusion for pressing the valve body against the peripheral surface around the opening and an inclined portion sloping downward from the protrusion. The pressing mechanisms serve to press the valve body in a direction substantially perpendicular to the peripheral surface around the opening in a state that the valve body is positioned to face the opening, so that the valve body is pressed against the peripheral surface around the opening.
Public/Granted literature
- US20110033266A1 GATE VALVE AND SUBSTRATE PROCESSING SYSTEM USING SAME Public/Granted day:2011-02-10
Information query
IPC分类: