Invention Grant
US08419911B2 Deposition method by physical vapor deposition and target for deposition processing by physical vapor deposition
失效
通过物理气相沉积沉积法和通过物理气相沉积沉积处理的目标物
- Patent Title: Deposition method by physical vapor deposition and target for deposition processing by physical vapor deposition
- Patent Title (中): 通过物理气相沉积沉积法和通过物理气相沉积沉积处理的目标物
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Application No.: US11339506Application Date: 2006-01-26
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Publication No.: US08419911B2Publication Date: 2013-04-16
- Inventor: Hideki Yamashita , Takafumi Okuma , Hiroshi Hayata , Hitoshi Yamanishi , Tadashi Kimura , Hirokazu Nakaue
- Applicant: Hideki Yamashita , Takafumi Okuma , Hiroshi Hayata , Hitoshi Yamanishi , Tadashi Kimura , Hirokazu Nakaue
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2005-020704 20050128; JP2005-166486 20050607; JP2005-310746 20051026
- Main IPC: C23C14/06
- IPC: C23C14/06

Abstract:
A deposition apparatus includes a processing chamber internally having a reduced-pressure space for deposition process to be carried out therein, a base material holding member for holding a base material to be subjected to the deposition process, a target support member for supporting a target thereon, and a power supply unit for applying electric power to the target support member to generate a plasma in the reduced-pressure space. In the deposition apparatus, deposition process is carried out by using the target, which has a recess portion in its surface and in which a powder target formed of a powder material is placed in an inner surface of the recess portion. Thus, the in-plane uniformity of deposition rate is improved and a stable film deposition is fulfilled.
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