Invention Grant
US08420304B2 Resist coating and developing apparatus, resist coating and developing method, resist-film processing apparatus, and resist-film processing method 有权
抗蚀涂层显影装置,抗蚀剂涂布显影法,抗蚀膜处理装置和抗蚀膜处理方法

  • Patent Title: Resist coating and developing apparatus, resist coating and developing method, resist-film processing apparatus, and resist-film processing method
  • Patent Title (中): 抗蚀涂层显影装置,抗蚀剂涂布显影法,抗蚀膜处理装置和抗蚀膜处理方法
  • Application No.: US12752483
    Application Date: 2010-04-01
  • Publication No.: US08420304B2
    Publication Date: 2013-04-16
  • Inventor: Yuichiro Inatomi
  • Applicant: Yuichiro Inatomi
  • Applicant Address: JP Minato-Ku
  • Assignee: Tokyo Electron Limited
  • Current Assignee: Tokyo Electron Limited
  • Current Assignee Address: JP Minato-Ku
  • Agency: Burr & Brown
  • Priority: JP2009-094269 20090408
  • Main IPC: G03F7/00
  • IPC: G03F7/00 G03F7/004 G03F7/40
Resist coating and developing apparatus, resist coating and developing method, resist-film processing apparatus, and resist-film processing method
Abstract:
The present invention provides a resist coating and developing apparatus, a resist coating and developing method, a resist-film processing apparatus, and a resist-film processing method, capable of reducing a line width roughness by planarizing a resist pattern. The resist coating and developing apparatus comprises: a resist-film forming part configured to coat a resist onto a substrate to form a resist film thereon; a resist developing part configured to develop the exposed resist film to obtain a patterned resist film; and a solvent-gas supply part configured to expose the resist film, which has been developed and patterned by the resist developing part, to a first solvent of a gaseous atmosphere having a solubility to the resist film. A solvent supply part supplies, to the resist film which has been exposed to the first solvent, a second solvent in a liquid state having a solubility to the resist film.
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