Invention Grant
- Patent Title: Solid-state imaging device and method of manufacturing solid-state imaging device
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Application No.: US13064175Application Date: 2011-03-09
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Publication No.: US08420434B2Publication Date: 2013-04-16
- Inventor: Yuichi Yamamoto , Hayato Iwamoto
- Applicant: Yuichi Yamamoto , Hayato Iwamoto
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2003-386933 20031117
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.
Public/Granted literature
- US20110165723A1 Solid-state imaging device and method of manufacturing solid-state imaging device Public/Granted day:2011-07-07
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