Invention Grant
- Patent Title: Method of forming active region structure
- Patent Title (中): 形成有源区结构的方法
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Application No.: US12801074Application Date: 2010-05-20
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Publication No.: US08420453B2Publication Date: 2013-04-16
- Inventor: Jun-Ho Yoon , Byeong-Soo Kim , Kyoung-Sub Shin , Hong Cho , Hyung-Yong Kim
- Applicant: Jun-Ho Yoon , Byeong-Soo Kim , Kyoung-Sub Shin , Hong Cho , Hyung-Yong Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2009-0075968 20090818
- Main IPC: H01L21/82
- IPC: H01L21/82

Abstract:
A method of forming an active region structure includes preparing a semiconductor substrate including a cell array region and a peripheral circuit region, forming preliminary cell active regions in the cell array region of the semiconductor substrate, and forming cell active regions in the preliminary cell active regions and at least one peripheral active region in the peripheral circuit region of the semiconductor substrate, such that the preliminary cell active regions, the cell active regions, and the at least one peripheral active region are integrally formed with the semiconductor substrate and protrude from the semiconductor substrate.
Public/Granted literature
- US20110045643A1 Method of forming active region structure Public/Granted day:2011-02-24
Information query
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