Invention Grant
- Patent Title: Generation of multiple diameter nanowire field effect transistors
- Patent Title (中): 生成多直径纳米线场效应晶体管
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Application No.: US12778534Application Date: 2010-05-12
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Publication No.: US08420455B2Publication Date: 2013-04-16
- Inventor: Sarunya Bangsaruntip , Guy Cohen , Jeffrey W. Sleight
- Applicant: Sarunya Bangsaruntip , Guy Cohen , Jeffrey W. Sleight
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/335
- IPC: H01L21/335
Abstract:
A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming pairs of semiconductor pads connected via respective nanowire channels at each of first and second regions with different initial semiconductor thicknesses and reshaping the nanowire channels into nanowires to each have a respective differing thickness reflective of the different initial semiconductor thicknesses.
Public/Granted literature
- US20110278544A1 GENERATION OF MULTIPLE DIAMETER NANOWIRE FIELD EFFECT TRANSISTORS Public/Granted day:2011-11-17
Information query
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