Invention Grant
- Patent Title: Semiconductor device and method of producing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13260886Application Date: 2009-11-25
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Publication No.: US08420458B2Publication Date: 2013-04-16
- Inventor: Makoto Nakazawa , Mitsunobu Miyamoto
- Applicant: Makoto Nakazawa , Mitsunobu Miyamoto
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Chen Yoshimura LLP
- Priority: JP2009-090747 20090403
- International Application: PCT/JP2009/006368 WO 20091125
- International Announcement: WO2010/113229 WO 20101007
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/20
Abstract:
A semiconductor device has a planarizing layer that is made of an inorganic film, and has a recessed portion formed in a region thereof in which a conductive film is disposed. A first contact hole penetrating through at least an interlayer insulating film is formed on a first wiring layer, while a second contact hole penetrating through at least the interlayer insulating film is formed on the conductive film so as to run through the inside of the recessed portion.
Public/Granted literature
- US20120032263A1 SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME Public/Granted day:2012-02-09
Information query
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