Invention Grant
US08420468B2 Strain-compensated field effect transistor and associated method of forming the transistor
有权
应变补偿场效应晶体管和相关的形成晶体管的方法
- Patent Title: Strain-compensated field effect transistor and associated method of forming the transistor
- Patent Title (中): 应变补偿场效应晶体管和相关的形成晶体管的方法
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Application No.: US13220753Application Date: 2011-08-30
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Publication No.: US08420468B2Publication Date: 2013-04-16
- Inventor: Alberto Escobar , Brian J. Greene , Edward J. Nowak
- Applicant: Alberto Escobar , Brian J. Greene , Edward J. Nowak
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Gibb & Riley, LLC
- Agent Richard M. Kotulak, Esq.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
Disclosed are embodiments of a field effect transistor (FET) having decreased drive current temperature sensitivity. Specifically, any temperature-dependent carrier mobility change in the FET channel region is simultaneously counteracted by an opposite strain-dependent carrier mobility change to ensure that drive current remains approximately constant or at least within a predetermined range in response to temperature variations. This opposite strain-dependent carrier mobility change is provided by a straining structure that is configured to impart a temperature-dependent amount of a pre-selected strain type on the channel region. Also disclosed are embodiments of an associated method of forming the field effect transistor.
Public/Granted literature
- US20110312143A1 STRAIN-COMPENSATED FIELD EFFECT TRANSISTOR AND ASSOCIATED METHOD OF FORMING THE TRANSISTOR Public/Granted day:2011-12-22
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