Invention Grant
US08420470B2 Method of fabricating a semiconductor device using compressive material with a replacement gate technique 有权
使用替代栅极技术制造使用压缩材料的半导体器件的方法

Method of fabricating a semiconductor device using compressive material with a replacement gate technique
Abstract:
The disclosed method of fabricating a semiconductor device structure forms a dummy gate structure on a substrate, deposits a dielectric material overlying the dummy gate structure in a manner that forms angled sidewalls of the deposited dielectric material outboard the spacers, and conformally deposits a compressive material overlying the deposited dielectric material such that the deposited compressive material forms angled peaks overlying the dummy gate structure. The method continues by forming an upper dielectric layer overlying the deposited compressive material, planarizing the resulting device structure, and exposing the temporary gate element of the dummy gate structure. Thereafter, the temporary gate element is removed, while leaving sections of the deposited compressive material outboard the spacers, and the gate recess is filled with a gate electrode material. The compressive material pulls the upper ends of the spacers apart to facilitate filling the gate recess.
Information query
Patent Agency Ranking
0/0