Invention Grant
- Patent Title: Method of fabricating a semiconductor device using compressive material with a replacement gate technique
- Patent Title (中): 使用替代栅极技术制造使用压缩材料的半导体器件的方法
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Application No.: US12869341Application Date: 2010-08-26
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Publication No.: US08420470B2Publication Date: 2013-04-16
- Inventor: Kisik Choi
- Applicant: Kisik Choi
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L21/8238 ; H01L21/3205 ; H01L21/4763

Abstract:
The disclosed method of fabricating a semiconductor device structure forms a dummy gate structure on a substrate, deposits a dielectric material overlying the dummy gate structure in a manner that forms angled sidewalls of the deposited dielectric material outboard the spacers, and conformally deposits a compressive material overlying the deposited dielectric material such that the deposited compressive material forms angled peaks overlying the dummy gate structure. The method continues by forming an upper dielectric layer overlying the deposited compressive material, planarizing the resulting device structure, and exposing the temporary gate element of the dummy gate structure. Thereafter, the temporary gate element is removed, while leaving sections of the deposited compressive material outboard the spacers, and the gate recess is filled with a gate electrode material. The compressive material pulls the upper ends of the spacers apart to facilitate filling the gate recess.
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