Invention Grant
US08420475B2 Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS process
有权
寄生垂直PNP双极晶体管及其在BiCMOS工艺中的制造方法
- Patent Title: Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS process
- Patent Title (中): 寄生垂直PNP双极晶体管及其在BiCMOS工艺中的制造方法
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Application No.: US12975545Application Date: 2010-12-22
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Publication No.: US08420475B2Publication Date: 2013-04-16
- Inventor: Tzuyin Chiu , TungYuan Chu , Wensheng Qian , YungChieh Fan , Donghua Liu , Jun Hu
- Applicant: Tzuyin Chiu , TungYuan Chu , Wensheng Qian , YungChieh Fan , Donghua Liu , Jun Hu
- Applicant Address: CN Shanghai
- Assignee: Shanghai Hua Hong Nec Electronics Company, Limited
- Current Assignee: Shanghai Hua Hong Nec Electronics Company, Limited
- Current Assignee Address: CN Shanghai
- Agency: Sinorica, LLC
- Agent Ming Chow
- Priority: CN200910202031 20091224
- Main IPC: H01L21/8238
- IPC: H01L21/8238

Abstract:
This invention published a parasitic vertical PNP bipolar transistor in BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process; the bipolar transistor comprises a collector, a base and an emitter. Collector is formed by active region with p-type ion implanting layer. It connects a p-type buried layer which formed in the bottom region of STI (Shallow Trench Isolation). The collector terminal connection is through the p-type buried layer and the adjacent active region. The base is formed by active region with n type ion implanting which is on the collector. Its connection is through the original p-type epitaxy layer after converting to n-type. The emitter is formed by the p-type epitaxy layer on the base region with heavy p-type doped. This invention also comprises the fabrication method of this parasitic vertical PNP bipolar in BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process. And this PNP bipolar transistor can be used as the IO (Input/Output) device in high speed, high current and power gain BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) circuits. It also provides a device option with low cost.
Public/Granted literature
- US20110156143A1 Parasitic Vertical PNP Bipolar Transistor And Its Fabrication Method In Bicmos Process Public/Granted day:2011-06-30
Information query
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