Invention Grant
- Patent Title: Memory cell device and method of manufacture
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Application No.: US13346749Application Date: 2012-01-10
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Publication No.: US08420481B2Publication Date: 2013-04-16
- Inventor: Sandra Mege
- Applicant: Sandra Mege
- Applicant Address: US CA Sunnyvale FR Corbeil Essonnes
- Assignee: Adesto Technologies Corporation,Altis Semiconductor
- Current Assignee: Adesto Technologies Corporation,Altis Semiconductor
- Current Assignee Address: US CA Sunnyvale FR Corbeil Essonnes
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
According to one embodiment of the present invention, a solid state electrolyte memory cell includes a cathode, an anode and a solid state electrolyte. The anode includes an intercalating material and first metal species dispersed in the intercalating material.
Public/Granted literature
- US20120104341A1 MEMORY CELL DEVICE AND METHOD OF MANUFACTURE Public/Granted day:2012-05-03
Information query
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