Invention Grant
- Patent Title: Structure and method for replacement metal gate field effect transistors
- Patent Title (中): 替代金属栅场效应晶体管的结构和方法
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Application No.: US12942097Application Date: 2010-11-09
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Publication No.: US08420491B2Publication Date: 2013-04-16
- Inventor: Henry K. Utomo , Unoh Kwon , Dimitri Anastassios Levedakis , Ravikumar Ramachandran , Viraj Yashawant Sardesai , Rajasekhar Venigalla
- Applicant: Henry K. Utomo , Unoh Kwon , Dimitri Anastassios Levedakis , Ravikumar Ramachandran , Viraj Yashawant Sardesai , Rajasekhar Venigalla
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Yuanmin Cai; Howard M Cohn
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A structure and method for replacement metal gate (RMG) field effect transistors is disclosed. Silicide regions are formed on a raised source-drain (RSD) structure. The silicide regions form a chemical mechanical polish (CMP) stopping layer during a CMP process used to expose the gates prior to replacement. Protective layers are then applied and etched in the formation of metal contacts.
Public/Granted literature
- US20120112290A1 CONTROLLED CONTACT FORMATION PROCESS Public/Granted day:2012-05-10
Information query
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