Invention Grant
- Patent Title: Semiconductor structure and method of forming the semiconductor structure that provides two individual resistors or a capacitor
- Patent Title (中): 半导体结构和形成提供两个单独电阻器或电容器的半导体结构的方法
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Application No.: US13486149Application Date: 2012-06-01
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Publication No.: US08420497B2Publication Date: 2013-04-16
- Inventor: Jeffrey Klatt
- Applicant: Jeffrey Klatt
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A semiconductor structure is formed in the metal interconnect structure of an integrated circuit in a method that provides either two individual resistors that are vertically isolated from each other, or a metal-insulator-metal (MIM) capacitor. As a result, both semiconductor resistors and MIM capacitors can be formed in the same process flow.
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