Invention Grant
- Patent Title: Copper wiring surface protective liquid and method for manufacturing semiconductor circuit
- Patent Title (中): 铜布线表面保护液及制造半导体电路的方法
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Application No.: US13119539Application Date: 2009-09-02
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Publication No.: US08420529B2Publication Date: 2013-04-16
- Inventor: Kenji Yamada , Kenji Shimada , Hiroshi Matsunaga
- Applicant: Kenji Yamada , Kenji Shimada , Hiroshi Matsunaga
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Gas Chemical Company, Inc.
- Current Assignee: Mitsubishi Gas Chemical Company, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-240671 20080919
- International Application: PCT/JP2009/065320 WO 20090902
- International Announcement: WO2010/032616 WO 20100325
- Main IPC: H01L21/28
- IPC: H01L21/28

Abstract:
A copper wiring material surface protective liquid for production of a semiconductor device is provided, containing an oxyalkylene adduct of an acetylenediol containing an acetylenediol having an oxyalkylene having 2 or 3 carbon atoms added thereto. A method for producing a semiconductor circuit device is provided, containing: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering method; then forming a copper wiring containing 80% by mass or more of copper thereon by a plating method; and flattening the wiring by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a copper wiring, the semiconductor substrate having an exposed surface of a copper wiring material being treated by making in contact with the copper wiring material surface protective liquid.
Public/Granted literature
- US20110237071A1 COPPER WIRING SURFACE PROTECTIVE LIQUID AND METHOD FOR MANUFACTURING SEMICONDUCTOR CIRCUIT Public/Granted day:2011-09-29
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