Nano-interconnects for atomic and molecular scale circuits

Invention Grant

US08420530B2 Nano-interconnects for atomic and molecular scale circuits 失效

Title translation: 用于原子和分子尺度电路的纳米互连

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Patent Title: Nano-interconnects for atomic and molecular scale circuits
Patent Title (中): 用于原子和分子尺度电路的纳米互连
Application No.: US12672885

Application Date: 2007-08-10
Publication No.: US08420530B2

Publication Date: 2013-04-16
Inventor: Naing Tun Thet , Christian Joachim , Natarajan Chandrasekhar
Applicant: Naing Tun Thet , Christian Joachim , Natarajan Chandrasekhar
Applicant Address: SG Connexis
Assignee: Agency for Science, Technology and Research
Current Assignee: Agency for Science, Technology and Research
Current Assignee Address: SG Connexis
Agency: Foley & Lardner LLP
International Application: PCT/SG2007/000247 WO 20070810
International Announcement: WO2009/022982 WO 20090219
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/44 ; H01L23/48

Nano-interconnects for atomic and molecular scale circuits

Abstract:

A method for forming interconnects in a substrate, the substrate comprising a semiconductor layer on an oxide layer forming a silicon-on-oxide substrate, the method comprising forming a plurality of holes into the substrate to the semiconductor layer, and metalizing the plurality of holes to form the interconnects.

Abstract(Chinese):

一种在衬底中形成互连的方法，所述衬底包括形成氧化硅衬底的氧化物层上的半导体层，所述方法包括在所述衬底中形成多个孔至所述半导体层，以及使所述多个孔金属化以形成互连。

Public/Granted literature

US20110018138A1 NANO-INTERCONNECTS FOR ATOMIC AND MOLECULAR SCALE CIRCUITS Public/Granted day:2011-01-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）