Invention Grant
US08420533B2 Metallization system of a semiconductor device comprising rounded interconnects formed by hard mask rounding 有权
包括通过硬掩模四舍五入形成的圆形互连的半导体器件的金属化系统

Metallization system of a semiconductor device comprising rounded interconnects formed by hard mask rounding
Abstract:
In sophisticated metallization systems, vertical contacts and metal lines may be formed on the basis of a dual inlaid strategy, wherein an edge rounding or corner rounding may be applied to the trench hard mask prior to forming the via openings on the basis of a self-aligned via trench concept. Consequently, self-aligned interconnect structures may be obtained, while at the same time providing superior fill conditions during the deposition of barrier materials and conductive fill materials.
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