Invention Grant
US08420533B2 Metallization system of a semiconductor device comprising rounded interconnects formed by hard mask rounding
有权
包括通过硬掩模四舍五入形成的圆形互连的半导体器件的金属化系统
- Patent Title: Metallization system of a semiconductor device comprising rounded interconnects formed by hard mask rounding
- Patent Title (中): 包括通过硬掩模四舍五入形成的圆形互连的半导体器件的金属化系统
-
Application No.: US12939424Application Date: 2010-11-04
-
Publication No.: US08420533B2Publication Date: 2013-04-16
- Inventor: Robert Seidel , Thomas Werner
- Applicant: Robert Seidel , Thomas Werner
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102010002454 20100226
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
In sophisticated metallization systems, vertical contacts and metal lines may be formed on the basis of a dual inlaid strategy, wherein an edge rounding or corner rounding may be applied to the trench hard mask prior to forming the via openings on the basis of a self-aligned via trench concept. Consequently, self-aligned interconnect structures may be obtained, while at the same time providing superior fill conditions during the deposition of barrier materials and conductive fill materials.
Public/Granted literature
Information query
IPC分类: