Invention Grant
US08420534B2 Atomic layer deposition of crystalline PrCaMnO (PCMO) and related methods
有权
结晶PrCaMnO（PCMO）的原子层沉积及相关方法
- Patent Title: Atomic layer deposition of crystalline PrCaMnO (PCMO) and related methods
- Patent Title (中): 结晶PrCaMnO（PCMO）的原子层沉积及相关方法
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Application No.: US12902590Application Date: 2010-10-12
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Publication No.: US08420534B2Publication Date: 2013-04-16
- Inventor: Eugene P. Marsh
- Applicant: Eugene P. Marsh
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/92
- IPC: H01L29/92 ; H01L21/02
Abstract:
Methods of forming a PrCaMnO (PCMO) material by atomic layer deposition. The methods include separately exposing a surface of a substrate to a manganese-containing precursor, an oxygen-containing precursor, a praseodymium-containing precursor and a calcium-containing precursor. The resulting PCMO material is crystalline. A semiconductor device structure including the PCMO material, and related methods, are also disclosed.
Public/Granted literature
- US20120086104A1 ATOMIC LAYER DEPOSITION OF CRYSTALLINE PrCaMnO (PCMO) AND RELATED STRUCTURES AND METHODS Public/Granted day:2012-04-12
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