Plasma processing method

Invention Grant

US08420547B2 Plasma processing method 有权

Title translation: 等离子体处理方法

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Patent Title: Plasma processing method
Patent Title (中): 等离子体处理方法
Application No.: US12707211

Application Date: 2010-02-17
Publication No.: US08420547B2

Publication Date: 2013-04-16
Inventor: Yoshinobu Ooya
Applicant: Yoshinobu Ooya
Applicant Address: JP Tokyo
Assignee: Tokyo Electron Limited
Current Assignee: Tokyo Electron Limited
Current Assignee Address: JP Tokyo
Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
Priority: JP2009-035344 20090218
Main IPC: H01L21/308
IPC: H01L21/308

Abstract:

A plasma processing method performed in a plasma processing apparatus including a processing chamber accommodating a substrate in which a plasma is generated; a mounting table mounting the substrate, which is provided in the processing chamber and to which a plasma attraction high frequency voltage is applied; and a facing electrode provided to face the mounting table in the processing chamber, to which a negative DC voltage is applied, the method including: applying a plasma attraction high frequency voltage to the mounting table for a predetermined period of time; and stopping the application of the plasma attraction high frequency voltage to the mounting table. In the plasma processing method, the application of the plasma attraction high frequency voltage and stopping thereof are alternately repeated.

Abstract(Chinese):

一种在等离子体处理装置中进行的等离子体处理方法，该等离子体处理装置包括容纳产生等离子体的基板的处理室; 安装基板的安装台，其设置在处理室中并且施加等离子体吸引高频电压; 以及面向所述处理室中的安装台的面对电极，施加负的直流电压，所述方法包括：将等离子体吸引高频电压施加到所述安装台上预定的时间段; 并停止向安装台施加等离子体吸引高频电压。在等离子体处理方法中，交替地重复施加等离子体吸引高频电压和停止。

Public/Granted literature

US20100210114A1 PLASMA PROCESSING METHOD Public/Granted day:2010-08-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/308	.......应用掩膜的（H01L21/3063，H01L21/3065优先）