Invention Grant
US08420551B2 Methods of fabricating semiconductor devices and semiconductor devices fabricated by the same 有权
制造半导体器件和由其制造的半导体器件的方法

Methods of fabricating semiconductor devices and semiconductor devices fabricated by the same
Abstract:
Example methods and example embodiments include methods of fabricating semiconductor devices and semiconductor devices fabricated by the same. Example fabricating methods include forming a first nanowire, oxidizing the first nanowire to form a first nanostructure including a first insulator and a second nanowire, and oxidizing the second nanowire to form a second nanostructure including a second insulator and nanodots. Example semiconductor devices include nanostructures including nanodots and nanostructures providing storage nodes in memory devices.
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