Invention Grant
- Patent Title: Methods of fabricating semiconductor devices and semiconductor devices fabricated by the same
- Patent Title (中): 制造半导体器件和由其制造的半导体器件的方法
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Application No.: US12961054Application Date: 2010-12-06
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Publication No.: US08420551B2Publication Date: 2013-04-16
- Inventor: Myung-Jong Kim , In-Seok Yeo , Dae-Hong Ko , Hyun-Chul Sohn , Mann-Ho Cho , Sang-Yeon Kim
- Applicant: Myung-Jong Kim , In-Seok Yeo , Dae-Hong Ko , Hyun-Chul Sohn , Mann-Ho Cho , Sang-Yeon Kim
- Applicant Address: KR Gyenggi-Do KR Seoul
- Assignee: Samsung Electronics Co., Ltd.,Industry-Academic Cooperation Foundation
- Current Assignee: Samsung Electronics Co., Ltd.,Industry-Academic Cooperation Foundation
- Current Assignee Address: KR Gyenggi-Do KR Seoul
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0120820 20091207
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Example methods and example embodiments include methods of fabricating semiconductor devices and semiconductor devices fabricated by the same. Example fabricating methods include forming a first nanowire, oxidizing the first nanowire to form a first nanostructure including a first insulator and a second nanowire, and oxidizing the second nanowire to form a second nanostructure including a second insulator and nanodots. Example semiconductor devices include nanostructures including nanodots and nanostructures providing storage nodes in memory devices.
Public/Granted literature
- US20110165761A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES FABRICATED BY THE SAME Public/Granted day:2011-07-07
Information query
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