Invention Grant
- Patent Title: Manufacturing method for semiconductor device and manufacturing apparatus for semiconductor device
- Patent Title (中): 半导体装置的制造方法及半导体装置的制造装置
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Application No.: US12929364Application Date: 2011-01-19
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Publication No.: US08420555B2Publication Date: 2013-04-16
- Inventor: Masaki Kamimura , Kenichi Yoshino
- Applicant: Masaki Kamimura , Kenichi Yoshino
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2008-164692 20080624
- Main IPC: F27D19/00
- IPC: F27D19/00 ; F27D21/00 ; A01H5/02 ; C21D9/00 ; H01L21/00

Abstract:
A manufacturing method for a semiconductor device including: determining pattern dependency of a radiation factor of an element forming surface of one wafer having a predetermined pattern formed on the wafer; determining a heating surface of the wafer, based on the pattern dependency of the radiation factor; holding the one wafer having the determined heating surface and another wafer having a determined heating surface, spaced at a predetermined distance in such a manner that non-heating surfaces of the one wafer and the another wafer oppose to each other; and heating the each heating surface of the one wafer and the another wafer.
Public/Granted literature
- US20110117512A1 Manufacturing method for semiconductor device and manufacturing apparatus for semiconductor device Public/Granted day:2011-05-19
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