Invention Grant
US08421052B2 Transverse force, pressure and vibration sensors using piezoelectric nanostructures 有权
使用压电纳米结构的横向力,压力和振动传感器

Transverse force, pressure and vibration sensors using piezoelectric nanostructures
Abstract:
An electrical device includes an insulating substrate; an elongated piezoelectric semiconductor structure, a first electrode and a second electrode. A first portion of the elongated piezoelectric semiconductor structure is affixed to the substrate and a second portion of the elongated piezoelectric semiconductor structure extends outwardly from the substrate. The first electrode is electrically coupled to a first end of the first portion of the elongated piezoelectric semiconductor structure. The second electrode is electrically coupled to a second end of the first portion of the elongated piezoelectric semiconductor structure.
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