Invention Grant
US08421052B2 Transverse force, pressure and vibration sensors using piezoelectric nanostructures
有权
使用压电纳米结构的横向力,压力和振动传感器
- Patent Title: Transverse force, pressure and vibration sensors using piezoelectric nanostructures
- Patent Title (中): 使用压电纳米结构的横向力,压力和振动传感器
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Application No.: US12855766Application Date: 2010-08-13
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Publication No.: US08421052B2Publication Date: 2013-04-16
- Inventor: Zhong L. Wang , Peng Fei
- Applicant: Zhong L. Wang , Peng Fei
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agency: Bockhop & Associates, LLC
- Agent Bryan W. Bockhop
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An electrical device includes an insulating substrate; an elongated piezoelectric semiconductor structure, a first electrode and a second electrode. A first portion of the elongated piezoelectric semiconductor structure is affixed to the substrate and a second portion of the elongated piezoelectric semiconductor structure extends outwardly from the substrate. The first electrode is electrically coupled to a first end of the first portion of the elongated piezoelectric semiconductor structure. The second electrode is electrically coupled to a second end of the first portion of the elongated piezoelectric semiconductor structure.
Public/Granted literature
- US20110006286A1 Transverse Force, Pressure and Vibration Sensors using Piezoelectric Nanostructures Public/Granted day:2011-01-13
Information query
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