Invention Grant
US08421061B2 Memory element and semiconductor device including the memory element
有权
存储元件和包括存储元件的半导体器件
- Patent Title: Memory element and semiconductor device including the memory element
- Patent Title (中): 存储元件和包括存储元件的半导体器件
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Application No.: US11713751Application Date: 2007-03-05
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Publication No.: US08421061B2Publication Date: 2013-04-16
- Inventor: Mikio Yukawa , Nozomu Sugisawa
- Applicant: Mikio Yukawa , Nozomu Sugisawa
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-066527 20060310
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L51/00
Abstract:
It is an object of the present invention to reduce variations in behavior of each memory element. In addition, it is another object of the present invention to obtain a semiconductor device, on which the memory element is mounted, which is superior in terms of performance and reliability. A memory element of the present invention includes in its structure a first conductive layer; a semiconductor layer; an organic compound layer; and a second conductive layer, where the semiconductor layer and the organic compound layer are interposed between the first conductive layer and the second conductive layer, and the semiconductor layer is formed to be in contact with the first conductive layer and/or the second conductive layer. With such a structure, variations in behavior of each memory element are reduced.
Public/Granted literature
- US20080017849A1 Memory element and semiconductor device Public/Granted day:2008-01-24
Information query
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