Invention Grant
- Patent Title: Semiconductor device with heterojunctions and an interdigitated structure
- Patent Title (中): 具有异质结和交叉结构的半导体器件
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Application No.: US13017397Application Date: 2011-01-31
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Publication No.: US08421074B2Publication Date: 2013-04-16
- Inventor: Pere Roca I. Cabarrocas , Jerome Damon-Lacoste
- Applicant: Pere Roca I. Cabarrocas , Jerome Damon-Lacoste
- Applicant Address: FR Paris FR Palaiseau
- Assignee: Centre National de la Recherche Scientifique (CNRS),Ecole Polytechnique
- Current Assignee: Centre National de la Recherche Scientifique (CNRS),Ecole Polytechnique
- Current Assignee Address: FR Paris FR Palaiseau
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0550174 20050120
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L31/0376 ; H01L31/20 ; H01L31/036
Abstract:
A Semiconductor device including, on at least one surface of a layer made of a crystalline semiconductor material of a certain type of conductivity, a layer made of an amorphous semiconductor material, doped with a type of conductivity opposite to the type of conductivity of the crystalline semiconductor material layer, characterized in that the concentration of the doping elements in the amorphous semiconductor layer varies gradually.
Public/Granted literature
- US20110120541A1 SEMICONDUCTOR DEVICE WITH HETEROJUNCTIONS AND AN INTERDIGITATED STRUCTURE Public/Granted day:2011-05-26
Information query
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