Invention Grant
- Patent Title: Semiconductor material, method of producing semiconductor material, light emitting device and light receiving device
- Patent Title (中): 半导体材料，半导体材料的制造方法，发光装置和光接收装置
-
Application No.: US12617104Application Date: 2009-11-12
-
Publication No.: US08421115B2Publication Date: 2013-04-16
- Inventor: Kazushige Yamamoto , Tatsuo Shimizu
- Applicant: Kazushige Yamamoto , Tatsuo Shimizu
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-292211 20081114
- Main IPC: H01L33/16
- IPC: H01L33/16 ; H01L31/0256
Abstract:
A semiconductor material includes a matrix semiconductor includes constituent atoms bonded to each other into a tetrahedral bond structure, and a heteroatom Z doped to the matrix semiconductor, in which the heteroatom Z is inserted in a bond so as to form a bond-center structure with an stretched bond length, and the bond-center structure is contained in a proportion of 1% or more based on the heteroatom Z.
Public/Granted literature
Information query
IPC分类:
