Invention Grant
US08421120B2 Field effect transistor capable of reducing shift of threshold voltage
有权
能够减小阈值电压偏移的场效应晶体管
- Patent Title: Field effect transistor capable of reducing shift of threshold voltage
- Patent Title (中): 能够减小阈值电压偏移的场效应晶体管
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Application No.: US11760899Application Date: 2007-06-11
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Publication No.: US08421120B2Publication Date: 2013-04-16
- Inventor: Yasunori Bito
- Applicant: Yasunori Bito
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-163507 20060613
- Main IPC: H01L29/66
- IPC: H01L29/66

Abstract:
A problem is arisen in conventional J-FETs that a shifting in a threshold voltage (VT) is generated before or after an energization with a gate current. A junction gate field effect transistor (J-FET) according to the present invention includes an undoped InGaAs channel layer 5, which is capable of accumulating carrier of a first conductivity type, a p+ type GaAs layer 17 (semiconductor layer), which is provided on the undoped InGaAs channel layer 5, and contains an impurity of a second conductivity type, and a gate electrode 18, which is provided on the p+ type GaAs layer 17. Here, the concentration of hydrogen contained in the p+ type GaAs layer 17 is lower than the concentration of the second conductivity type carrier in the p+ type GaAs layer 17.
Public/Granted literature
- US20070284568A1 FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME Public/Granted day:2007-12-13
Information query
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