Invention Grant
- Patent Title: Antimonide-based compound semiconductor with titanium tungsten stack
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Application No.: US11788145Application Date: 2007-04-18
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Publication No.: US08421121B2Publication Date: 2013-04-16
- Inventor: Yeong-Chang Chou , Jay Crawford , Jane Lee , Jeffrey Ming-Jer Yang , John Bradley Boos , Nicolas Alexandrou Papanicolaou
- Applicant: Yeong-Chang Chou , Jay Crawford , Jane Lee , Jeffrey Ming-Jer Yang , John Bradley Boos , Nicolas Alexandrou Papanicolaou
- Applicant Address: US VA Falls Church
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US VA Falls Church
- Agency: Carmen Patti Law Group, LLC
- Main IPC: H01L29/778
- IPC: H01L29/778

Abstract:
An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.
Public/Granted literature
- US20080258176A1 Antimonide-based compound semiconductor with titanium tungsten stack Public/Granted day:2008-10-23
Information query
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