Invention Grant
US08421134B2 Back side illumination image sensor reduced in size and method for manufacturing the same
有权
背面照明图像传感器尺寸减小,制造方法也是如此
- Patent Title: Back side illumination image sensor reduced in size and method for manufacturing the same
- Patent Title (中): 背面照明图像传感器尺寸减小,制造方法也是如此
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Application No.: US12976851Application Date: 2010-12-22
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Publication No.: US08421134B2Publication Date: 2013-04-16
- Inventor: In Gyun Jeon , Se Jung Oh , Heui Gyun Ahn , Jun Ho Won
- Applicant: In Gyun Jeon , Se Jung Oh , Heui Gyun Ahn , Jun Ho Won
- Applicant Address: KR Seoul
- Assignee: Siliconfile Technologies Inc.
- Current Assignee: Siliconfile Technologies Inc.
- Current Assignee Address: KR Seoul
- Agency: Kile Park Goekjian Reed & McManus PLLC
- Priority: KR10-2009-0132790 20091229
- Main IPC: H01L31/18
- IPC: H01L31/18

Abstract:
A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.
Public/Granted literature
- US20110156113A1 BACK SIDE ILLUMINATION IMAGE SENSOR REDUCED IN SIZE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-06-30
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