A transistor includes a first fin structure and at least a second fin structure formed on a substrate. A deep trench area is formed between the first and second fin structures. The deep trench area extends through an insulator layer of the substrate and a semiconductor layer of the substrate. A high-k metal gate is formed within the deep trench area. A polysilicon layer is formed within the deep trench area adjacent to the metal layer. The polysilicon layer and the high-k metal layer are recessed below a top surface of the insulator layer. A poly strap in the deep trench area is formed on top of the high-k metal gate and the polysilicon material. The poly strap is dimensioned to be below a top surface of the first and second fin structures. The first fin structure and the second fin structure are electrically coupled to the poly strap.