Invention Grant
US08421158B2 Chip structure with a passive device and method for forming the same 有权
具有无源器件的芯片结构及其形成方法

  • Patent Title: Chip structure with a passive device and method for forming the same
  • Patent Title (中): 具有无源器件的芯片结构及其形成方法
  • Application No.: US10710596
    Application Date: 2004-07-23
  • Publication No.: US08421158B2
    Publication Date: 2013-04-16
  • Inventor: Mou-Shiung Lin
  • Applicant: Mou-Shiung Lin
  • Applicant Address: TW Hsinchu
  • Assignee: Megica Corporation
  • Current Assignee: Megica Corporation
  • Current Assignee Address: TW Hsinchu
  • Agency: Seyfarth Shaw LLP
  • Priority: TW92120050A 20030723
  • Main IPC: H01L27/08
  • IPC: H01L27/08
Chip structure with a passive device and method for forming the same
Abstract:
The present invention provides a method for forming a chip structure with a resistor. A semiconductor substrate is provided and has a surface. A plurality of electronic devices and a resistor is formed on the surface of the semiconductor substrate. A plurality of dielectric layers and a plurality of circuit layers are formed over the semiconductor substrate. The dielectric layers are stacked over the semiconductor substrate and have a plurality of via holes. Each of the circuit layers is disposed on corresponding one of the dielectric layers respectively, wherein the circuit layers are electrically connected with each other through the via holes and are electrically connected to the electronic devices. A passivation layer is formed over the dielectric layers and the circuit layers. A circuit line is formed over the passivation layer, wherein the circuit line passes through the passivation layer and is electrically connected to the resistor.
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