Invention Grant
US08421182B2 Field effect transistor having MOS structure made of nitride compound semiconductor
有权
具有由氮化物化合物半导体制成的MOS结构的场效应晶体管
- Patent Title: Field effect transistor having MOS structure made of nitride compound semiconductor
- Patent Title (中): 具有由氮化物化合物半导体制成的MOS结构的场效应晶体管
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Application No.: US12639199Application Date: 2009-12-16
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Publication No.: US08421182B2Publication Date: 2013-04-16
- Inventor: Takehiko Nomura , Seikoh Yoshida , Sadahiro Kato
- Applicant: Takehiko Nomura , Seikoh Yoshida , Sadahiro Kato
- Applicant Address: JP Tokyo
- Assignee: Furukawa Electric Co., Ltd.
- Current Assignee: Furukawa Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Kubotera & Associates, LLC
- Priority: JP2007-147466 20070601
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
A semiconductor layer of a second conductive type is formed on a RESURF layer of a first conductive type that is formed on a buffer layer. A contact layer of the first conductive type is formed in or on the semiconductor layer. A source electrode is formed on the contact layer. A drain electrode is formed on the RESURF layer. A gate insulating film is formed on the semiconductor layer to overlap with an end of the semiconductor layer. A gate electrode is formed on the gate insulating film to overlap with the end of the semiconductor layer. A channel formed near the end of the semiconductor layer is electrically connected to the RESURF layer.
Public/Granted literature
- US20100127307A1 FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-05-27
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