Invention Grant
- Patent Title: Structure of very high insertion loss of the substrate noise decoupling
-
Application No.: US13016126Application Date: 2011-01-28
-
Publication No.: US08421183B2Publication Date: 2013-04-16
- Inventor: Hanyi Ding , Kai D. Feng , Zhong-Xiang He , Xuefeng Liu
- Applicant: Hanyi Ding , Kai D. Feng , Zhong-Xiang He , Xuefeng Liu
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A structure includes a substrate comprising a region having a circuit or device which is sensitive to electrical noise. Additionally, the structure includes a first isolation structure extending through an entire thickness of the substrate and surrounding the region and a second isolation structure extending through the entire thickness of the substrate and surrounding the region.
Public/Granted literature
- US20110132652A1 STRUCTURE OF VERY HIGH INSERTION LOSS OF THE SUBSTRATE NOISE DECOUPLING Public/Granted day:2011-06-09
Information query
IPC分类:
