Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12848355Application Date: 2010-08-02
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Publication No.: US08421187B2Publication Date: 2013-04-16
- Inventor: Syouichi Kotani
- Applicant: Syouichi Kotani
- Applicant Address: JP Tokyo
- Assignee: Teramikros, Inc.
- Current Assignee: Teramikros, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick PC
- Priority: JP2009-183160 20090806
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L23/52 ; H01L21/82

Abstract:
A first insulating film includes five extension lines formed between connection pad portions of adjacent two predetermined wiring lines. The first insulating film also includes peripheral portions of the adjacent two connection pad portions on both sides of the five extension lines. A second insulating film made of a polyimide resin or the like is formed on the upper surface of the first insulating layer by a screen printing method or ink jet method. Since a short circuit may be easily caused by electromigration in a region where the five extension lines are parallel to another, the short circuit due to the electromigration can be prevented by covering only that region with the second insulating film. Accordingly, the region where the second insulating film is formed can be as small as possible, and the semiconductor wafer does not easily warp.
Public/Granted literature
- US20110031584A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-02-10
Information query
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