Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12976618Application Date: 2010-12-22
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Publication No.: US08421236B2Publication Date: 2013-04-16
- Inventor: Yukitoshi Ota , Hiroshige Hirano , Yutaka Itou
- Applicant: Yukitoshi Ota , Hiroshige Hirano , Yutaka Itou
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-006732 20100115
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device includes an electrode pad formed above a semiconductor substrate, and being a connecting portion for an external electrical connection; a multilayer body including a plurality of first interconnect layers formed in a plurality of insulating films stacked between the semiconductor substrate and the connecting portion and including an upper interconnect connected to the connecting portion, and a via configured to connect the first interconnect layers; a ring body formed in the plurality of insulating films to surround the multilayer body without interposing space, and including a plurality of second interconnect layers and at least one line via linearly connecting the second interconnect layers; and a lead line electrically connecting the connecting portion to an internal circuit. The multilayer body is connected to the ring body by at least one of the plurality of first interconnect layers. The lead line is connected to the ring body.
Public/Granted literature
- US20110175232A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-07-21
Information query
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