Invention Grant
- Patent Title: Drive circuit for semiconductor switching element
- Patent Title (中): 半导体开关元件驱动电路
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Application No.: US12785934Application Date: 2010-05-24
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Publication No.: US08421505B2Publication Date: 2013-04-16
- Inventor: Ryouta Nakanishi
- Applicant: Ryouta Nakanishi
- Applicant Address: JP Niiza-shi
- Assignee: Sanken Electric Co., Ltd.
- Current Assignee: Sanken Electric Co., Ltd.
- Current Assignee Address: JP Niiza-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-142229 20090615
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
A drive circuit of first and second switches includes a first series circuit having a capacitor and a primary winding of a transformer and connected to both ends of a pulse signal generator, a first secondary winding of the transformer to apply a voltage to a control terminal of the first semiconductor switch based on the pulse signal, the first secondary winding being wound in a direction opposite to the primary winding, a second secondary winding of the transformer to apply a voltage to a control terminal of the second semiconductor switch based on the pulse signal, the second secondary winding being wound in the same direction to the primary winding, and a third semiconductor switch that turns on when the pulse signal is stopped, to shorten an ON period of the first semiconductor switch.
Public/Granted literature
- US20100315842A1 DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT Public/Granted day:2010-12-16
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